• Tresky unveils the photonics bonder for sub micron use in nano- and optoelectronics

    Interior_view_of_the_Photonics_Bonder_from_Tresky

    The German DIE Bonder specialist Tresky GmbH is excited to introduce its latest product, the highly precise photonics bonder. The recently developed bonder is based on a new machine concept. The stable granite base, makes it one of the most precise placement systems on the market. This level of precision is indispensable, especially for use in nano- and optoelectronics.

    Technological miniaturisation and functional integration in nano- and optoelectronics are essential for future- oriented product innovations. For the implementation of these technological innovations in new and marketable products, microassembly as well as assembly and connection technology play a crucial role. Positioning accuracy and reproducibility of complex microsystems are a necessity in the manufacturing and assembly process for the quality and reliability of these products.

    Tresky has developed the photonics bonder to successfully meet these requirements. The newly developed platform offers sub-micron placement accuracy, a travel range of 500 x 700 mm and a bonding head with minimum bonding forces of up to 0.01 N. Upon customer request, the bond force range can optionally be increased to 100 N, 300 N or 500 N. ” As is standard for us, we use granite as a machine base so that the highest possible precision can be guaranteed for optical components such as VCSELs, lasers, photodiodes, IR sensors or also for the development of quantum technologies,” Daniel Schultze, managing director of Tresky GmbH, introduces the new bonder.

    “We configure the Photonics Bonder individually according to the customer’s requirements and thus adapt it specifically to the requirements, thanks to a high level of modularity. Therefore, the bonder can be reliably used in prototyping, product development as well as in series production of nano- and optoelectronics. Furthermore, the photonics bonder also supports bonding from wafers up to 12”.

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